| 摘要 |
The invention relates to a semiconductor device (1) for a high power circuit breaker being shaped as a truncated cone comprising a first circular surface side (4) and an opposed, parallel second circular surface side (5), whereby the semiconductor device (1) comprising a plurality of wafers (8, 12) of semiconductor material, arranged with their circular sides parallel to the first circular surface side (4) and the second circular surface side (5), and connected firmly together by alloying, and whereby at least two of the wafers (8) comprise an internal layer (9) of basic semiconductor material arranged between two side layers (10, 11), the first side layer (10) comprising the same electrical conductivity than the internal layer (9) and the second side layer (11) comprising the opposite type of electrical conductivity than the internal layer (9) thus forming with the internal layer (9) a p-n junction. |
