Cleaning liquid for semiconductor elements and cleaning method using same

摘要

By cleaning with use of a cleaning liquid that contains 10-30% by mass of hydrogen peroxide, 0.005-10% by mass of a quaternary ammonium hydroxide, 0.005-5% by mass of potassium hydroxide, 0.000005-0.005% by mass of an amino polymethylene phosphonic acid and water, a hard mask, an organosiloxane-based thin film, dry etching residue and a photoresist can be removed without corroding a low-dielectric-constant interlayer dielectric film, a wiring material such as copper or an copper alloy, a barrier metal and a barrier dielectric film. According to preferred embodiments of the present invention, damage to copper wiring lines is suppressed even in cases where an acid is added into the cleaning liquid and significant decomposition of hydrogen peroxide is not caused even in cases where titanium is added into the cleaning liquid.

主权项

1. A cleaning liquid,
comprising 10 to 30% by mass of hydrogen peroxide, 0.005 to 10% by mass of a quaternary ammonium hydroxide, 0.005 to 5% by mass of potassium hydroxide, 0.000005 to 0.005% by mass of an amino polymethylene phosphonic acid and water.