| 摘要 |
An embodiment relates to a light emitting device. The light emitting device according to the embodiment comprises: a first conductive semiconductor layer; an active layer disposed on the first conductive semiconductor layer and having a plurality of barrier layers and a plurality of well layers; a plurality of superlattice layers disposed below the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the plurality of superlattice layers includes at least three superlattice layers and each of the at least three superlattice layers has a plurality of pairs of a first layer and a second layer, and the closer the superlattice layer is to the active layer among the at least three superlattice layers, a composition of aluminum in the first layer of the superlattice layer is gradually decreased, and each of the at least three superlattice layers has the same composition of aluminum in the second layer. |
