发明名称 |
REPLACEMENT CHANNEL ETCH FOR HIGH QUALITY INTERFACE |
摘要 |
Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems, and within the same integrated circuit die. Sacrificial fins are removed via wet and/or dry etch chemistries configured to provide trench bottoms that are non-faceted and have no or otherwise low-ion damage. The trench is then filled with desired semiconductor material. A trench bottom having low-ion damage and non-faceted morphology encourages a defect-free or low defect interface between the substrate and the replacement material. In an embodiment, each of a first set of the sacrificial silicon fins is recessed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed and replaced with an n-type material. Another embodiment may include a combination of native fins (e.g., Si) and replacement fins (e.g., SiGe). Another embodiment may include replacement fins all of the same configuration. |
申请公布号 |
WO2016209220(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
WO2015US37344 |
申请日期 |
2015.06.24 |
申请人 |
INTEL CORPORATION |
发明人 |
GLASS, Glenn A.;PANG, Ying;MISTKAWI, Nabil G.;MURTHY, Anand S.;GHANI, Tahir;CHAO, Huang-Lin |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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