| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide preventing effects on impurity diffusion from a substrate and improve the productivity by covering the front surface, back surface and lateral faces of the substrate with a substrate covering film and specifying the coverage and film thickness of the substrate covering film. SOLUTION: This substrate for a thin-film semiconductor element is obtained by placing a glass substrate 1 through substrate supporting points on a susceptor and regulating the contact area of the substrate supporting points with the glass substrate 1 to <=1% based on the substrate total surface area. In this state, a substrate covering film 20 is deposited on the front surface, back surface and lateral faces of the glass substrate 1 by a CVD method so as to provide >=100 nm thickness thereof. Thereby, the contact areas of the substrate supporting points and the substrate surface become uncovered regions 21 and the resultant substrate for the thin-film semiconductor element has >=99% and <100% substrate coverage and >=100 nm film thickness. A silicon film, a silicon oxide film, a silicon nitride film, a silicon oxynitride film or a silicon carbide film is used as the substrate covering film 20 and a square shape such as a rectangular or a regular square shape or the square shape with slits or grooves formed therein or a semicircular or a triangular shape can be used as the substrate supporting points.</p> |
