| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide ingot excellent in uniformity in characteristics and a silicon carbide substrate obtained by slicing the silicon carbide ingot, and a method for producing them. <P>SOLUTION: The method for producing the silicon carbide ingot includes steps of: preparing a base substrate 1 having an off angle with respect to a (0001) plane not greater than 1° and composed of single crystal silicon carbide; and growing a silicon carbide layer on a surface 4 of the base substrate 1. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed from the side in a direction of growth of the silicon carbide layer is set to 10°C/cm or less. Thereby, since the substantially entire surface including the central portion of an outermost growth surface 9 of the obtained silicon carbide ingot becomes a facet plane 5, a silicon carbide ingot having the entire surface as the facet plane 5 can be obtained by grinding only an outer circumferential end. <P>COPYRIGHT: (C)2013,JPO&INPIT |
