发明名称 Semiconductor laser device and method of fabricating the same
摘要 A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
申请公布号 US2006222036(A1) 申请公布日期 2006.10.05
申请号 US20060393891 申请日期 2006.03.31
申请人 SANYO ELECTRIC CO., LTD. 发明人 YAMAGUCHI TSUTOMU;HATA MASAYUKI;KANO TAKASHI;SHONO MASAYUKI;OHBO HIROKI;NOMURA YASUHIKO;IZU HIROAKI
分类号 H01S5/00;H01S3/06;H01S3/07;H01S5/02;H01S5/22 主分类号 H01S5/00
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