发明名称 Production of an integrated circuit including electrical contact on SiC
摘要 Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.
申请公布号 US8450196(B2) 申请公布日期 2013.05.28
申请号 US20070924093 申请日期 2007.10.25
申请人 RUPP ROLAND;GUTT THOMAS;TREU MICHAEL;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 RUPP ROLAND;GUTT THOMAS;TREU MICHAEL
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
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