发明名称 ATOM TRAP ELEMENT
摘要 PROBLEM TO BE SOLVED: To more effectively confine atoms. SOLUTION: The atom trap element is provided with a substrate 101 having protruding parts 102, a superconductive thin film 103 formed on the surface of the substrate 101 including the protruding parts 102, level difference parts 104 formed in the superconductive thin film 103 which are formed on the protruding parts 102, an opening part 105 formed at the level difference parts 104 of the superconductive thin film 103 and a removing area 106 which is part of the superconductive thin film 103 where the protruding part 102 is removed from the opening part 105 of the superconductive thin film 103. In the opening part 105 formed at the level difference parts 104 of the superconductive thin film 103, a loop circuit having a three-dimensional structure is formed in an edge part of the opening part 105. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009131931(A) 申请公布日期 2009.06.18
申请号 JP20070310134 申请日期 2007.11.30
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MUKAI TETSUYA;SHIMIZU FUJIO
分类号 B82B1/00;B82B3/00;H01L29/66;H01L39/00 主分类号 B82B1/00
代理机构 代理人
主权项
地址