INTEGRATED METAL SPACER AND AIR GAP INTERCONNECT

摘要

Embodiments described herein relate to methods for forming an air gap interconnect. A metal spacer layer is conformally deposited on a substrate having mandrel structures formed thereon. The metal spacer layer is etched to form spacer features and the mandrel structures are removed from the substrate. Various other dielectric deposition, patterning and etching steps may be performed to desirably pattern materials present on the substrate. Ultimately, a trench is formed between adjacent spacer features and a capping layer is deposited over the trench to form an air gap between the adjacent spacer features. For packaging purposes, an interconnect via may be configured to contact at least one of the spacer features adjacent the air gap.

主权项

1. A method of forming a semiconductor device, comprising:
forming spacer features on a substrate; depositing a dielectric layer over the spacer features; patterning the dielectric layer; etching the dielectric layer between adjacent spacer features; and depositing a capping layer over the spacer features, wherein an air gap is formed between adjacent spacer features.