Shock recording device

摘要

The present invention provides a shock recording device, comprising: a vibration energy harvester comprising a first electrode and a second electrode, the vibration energy harvester converting an energy of a shock applied thereto into a potential difference between the first electrode and the second electrode; and a ferroelectric transistor comprising a gate electrode, a source electrode, and a drain electrode, the ferroelectric transistor further comprising a stacked structure of a ferroelectric layer and a semiconductor layer. The gate electrode is electrically connected to the first electrode. The source electrode is electrically connected to the second electrode. This shock recording device does not need a power source used to record a shock.

主权项

1. A method for determining whether or not a shock was applied to a shock recording device, the method comprising:
(a) preparing the shock recording device comprising: a vibration energy harvester comprising a first electrode and a second electrode, the vibration energy harvester converting an energy of a shock applied thereto into a potential difference between the first electrode and the second electrode; and a ferroelectric transistor comprising a gate electrode, a source electrode, and a drain electrode, the ferroelectric transistor further comprising a stacked structure of a ferroelectric layer and a semiconductor layer, wherein the gate electrode is electrically connected to the first electrode; and the source electrode is electrically connected to the second electrode; (b) measuring a resistance value of the semiconductor layer through the drain electrode and the source electrode; and (c) determining whether or not a shock was applied to the shock recording device based on the resistance value, and wherein the shock recording device further comprises a zener diode which is electrically connected to the source electrode and the drain electrode.