| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can process data without write failure and suppress an increase in power consumption even when the band of external data to be inputted into a memory is higher than the processing speed of an internal memory. <P>SOLUTION: Memory array control circuits 12A-12N perform: a first operation of reading data which is stored in a storage section and can be processed at a first processing speed among processing speeds of a memory 100, and writing the data into a plurality of memory arrays 10A-10N; and a second operation of reading residual data which can be processed at a second processing speed among the processing speeds of the memory 100, and writing the data into the plurality of memory arrays 10A-10N. <P>COPYRIGHT: (C)2013,JPO&INPIT |
