| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystal that can grow a silicon carbide crystal of high quality.SOLUTION: A method of manufacturing a crystal in which a crystal of silicon carbide is grown on a lower surface of a seed crystal 4 from a solution 5 by bringing the lower surface of the seed crystal 4 arranged rotatably and made of the silicon carbide into contact with the solution 5 of silicon, including carbon, in a crucible 6 installed rotatably, and then lifting the seed crystal 4 includes: a contacting process of bringing the lower surface of the seed crystal 4 into contact with the solution 5; a seed crystal rotating process of rotating the seed crystal 4; a crucible rotating process of rotating the crucible 6; and a crucible stopping process of stopping rotating the crucible 6 while the lower surface of the seed crystal 4 is in contact with the solution 5 and the seed crystal 4 is rotated.SELECTED DRAWING: Figure 1 |
