发明名称 |
Chemically amplified resist material and pattern formation method using the same |
摘要 |
<p>In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.</p> |
申请公布号 |
EP1734407(A2) |
申请公布日期 |
2006.12.20 |
申请号 |
EP20060006301 |
申请日期 |
2006.03.27 |
申请人 |
PANASONIC CORPORATION |
发明人 |
ENDO, MASAYUKI;SASAGO, MASARU |
分类号 |
G03F7/039;C08L59/00;G03F7/20 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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