Verfahren zur Bildung einer leitfähigen Schicht mittels eines atomaren Schichtdepositionsprozesses,申请号DE19981020147-传众专利搜索

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发明名称	Verfahren zur Bildung einer leitfähigen Schicht mittels eines atomaren Schichtdepositionsprozesses
摘要
申请公布号	DE19820147(B4)	申请公布日期	2008.02.07
申请号	DE19981020147	申请日期	1998.05.06
申请人	SAMSUNG ELECTRONICS CO. LTD.	发明人	KANG, SANG-BOM;CHAE, YUN-SOOK;PARK, CHANG-SOO;LEE, SANG-IN
分类号	H01L21/285;C23C16/08;C23C16/42;C23C16/44;C23C16/455;H01L21/768	主分类号	H01L21/285
代理机构		代理人
主权项
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