Hetero-junction pin photodiode data transmission i.e. high-speed optical data transmission, has doped window layer made of p-doped indium aluminum arsenide with high band gap, and protective coating made of n or p-doped indium phosphide

摘要

The photodiode (PD) has an absorption layer (AS) made of binary compound semiconductor, and doped window layer (FS) made of p-doped indium aluminum arsenide with high band gap than the absorption layer. A protective coating is made of n or p-doped indium phosphide, and the absorption layer is made of undoped or lightly doped indium phosphide. A front sided contacting layer (VKS) of the photodiode is made of p-doped indium gallium arsenide for front sided contacts.