| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a ruthenium oxide film in a recess having a high aspect ratio of 50 or above while ensuring a short incubation time, a high film forming rate, and a high step coverage. <P>SOLUTION: The method for forming a ruthenium oxide film includes: providing a substrate in a processing chamber; supplying a ruthenium compound having a structure in which two beta-diketons and two groups selected among olefin, amine, nitril, and carbonyl are coordinate-bonded to Ru in a vapor state onto the substrate; supplying oxygen gas onto the substrate; and forming a ruthenium oxide film on the substrate by reaction between the ruthenium compound gas and the oxygen gas. <P>COPYRIGHT: (C)2013,JPO&INPIT |
