Methode of making a non-volatile MOS semiconductor memory device,申请号EP20040425936-传众专利搜索

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发明名称	Methode of making a non-volatile MOS semiconductor memory device
摘要
申请公布号	EP1675180(B1)	申请公布日期	2009.12.09
申请号	EP20040425936	申请日期	2004.12.22
申请人	STMICROELECTRONICS S.R.L.	发明人	SERVALLI, GIORGIO;BRAZZELLI, DANIELA
分类号	H01L21/8247;H01L21/28	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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