| 摘要 |
Provided is a silica glass crucible comprising: an inner layer having a space for melted silicon; and an outer layer arranged while covering the inner layer. The inner layer comprises: a direct acting unit with an internal diameter maintained; and a bottom unit with decreased internal diameter, and an inner side of the inner layer has bumps arranged from the direct acting unit toward the bottom unit to make melted silicon disperse without facing an ingot, so a process of single crystal growth can be proceeded stably and the quality of a single crystal ingot can be improved. |
