TRANSISTOR

摘要

A transistor includes source region and drain regions, a channel region, a drift region, a gate, a dummy gate, a gate dielectric layer and an interconnection line. The source and drain regions of a first conductivity type are in a substrate. The channel region of a second conductivity type is in the substrate and surrounds the source region. The drift region of the first conductivity type is beneath the drain region and extends toward the channel region. The gate is over the substrate and overlapped with the channel region and the drift region. The dummy gate is over the drift region and laterally adjacent to the gate. The gate dielectric layer is between the gate and the substrate and between the dummy gate and the drift region. The interconnection line is electrically connected to the dummy gate and configured to provide a voltage potential thereto.

主权项

1. A transistor, comprising:
a source region of a first conductivity type and a drain region of the first conductivity type in a substrate; a channel region of a second conductivity type opposite to the first conductivity type in the substrate and surrounding the source region; a drift region of the first conductivity type beneath the drain region and extending toward the channel region; a gate over the substrate and overlapped with a portion of the channel region and a portion of the drift region; a first metal-containing material over the drift region and laterally adjacent to the gate; a second metal-containing material over the drift region, and the first metal-containing material laterally between the gate and the second metal-containing material; a gate dielectric layer between the gate and the substrate and between the first metal-containing material and the drift region and between the second metal-containing material and the drift region; and an interconnection line electrically connected to the first metal-containing material and configured to provide a voltage potential to the first metal-containing material.