发明名称 |
Semiconductor Structure Including a Thermally Conductive, Electrically Insulating Layer |
摘要 |
A thermally conductive and electrically insulating layer is provided over a semiconductor structure. |
申请公布号 |
US2016247745(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201514630562 |
申请日期 |
2015.02.24 |
申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd |
发明人 |
Perkins Nathan;Dungan Thomas |
分类号 |
H01L23/373;H01L29/10;H01L29/08;H01L29/808;H01L29/737;H01L29/417;H01L29/205;H01L29/778;H01L23/367;H01L29/423 |
主分类号 |
H01L23/373 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor structure, comprising:
a layer disposed over a side of a substrate; a first electrical contact layer disposed over the layer; a second electrical contact disposed over the side of the substrate; and a thermally conductive and electrically insulating layer disposed over a portion of the layer and between the first electrical contact and the second electrical contact. |
地址 |
Singapore SG |