发明名称 Semiconductor Structure Including a Thermally Conductive, Electrically Insulating Layer
摘要 A thermally conductive and electrically insulating layer is provided over a semiconductor structure.
申请公布号 US2016247745(A1) 申请公布日期 2016.08.25
申请号 US201514630562 申请日期 2015.02.24
申请人 Avago Technologies General IP (Singapore) Pte. Ltd 发明人 Perkins Nathan;Dungan Thomas
分类号 H01L23/373;H01L29/10;H01L29/08;H01L29/808;H01L29/737;H01L29/417;H01L29/205;H01L29/778;H01L23/367;H01L29/423 主分类号 H01L23/373
代理机构 代理人
主权项 1. A semiconductor structure, comprising: a layer disposed over a side of a substrate; a first electrical contact layer disposed over the layer; a second electrical contact disposed over the side of the substrate; and a thermally conductive and electrically insulating layer disposed over a portion of the layer and between the first electrical contact and the second electrical contact.
地址 Singapore SG