ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES

摘要

Electron-beam (e-beam) based semiconductor device features are disclosed. In a particular aspect, a method includes performing a first lithography process to fabricate a first set of cut pattern features on a semiconductor device. A distance of each feature of the first set of cut pattern features from the feature to an active area is greater than or equal to a threshold distance. The method further includes performing an electron-beam (e-beam) process to fabricate a second cut pattern feature on the semiconductor device. A second distance of the second cut pattern feature from the second cut pattern feature to the active area is less than or equal to the threshold distance.

主权项

1. A method comprising:
performing a first lithography process to fabricate a first set of cut pattern features on a semiconductor device, wherein a distance of each feature of the first set of cut pattern features from the feature to an active area is greater than or equal to a threshold distance; and performing an electron-beam (e-beam) process to fabricate a second cut pattern feature on the semiconductor device, wherein a second distance of the second cut pattern feature from the second cut pattern feature to the active area is less than or equal to the threshold distance.