METHODS FOR FABRICATING INTEGRATED CIRCUITS USING DIRECTED SELF-ASSEMBLY INCLUDING A SUBSTANTIALLY PERIODIC ARRAY OF TOPOGRAPHICAL FEATURES THAT INCLUDES ETCH RESISTANT TOPOGRAPHICAL FEATURES FOR TRANSFERABILITY CONTROL

摘要

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a substantially periodic array of a plurality of topographical features including a plurality of etch resistant topographical features and at least one graphoepitaxy feature. The plurality of etch resistant topographical features define a plurality of etch resistant confinement wells and the at least one graphoepitaxy feature defines a graphoepitaxy confinement well that has a different size and/or shape than the etch resistant confinement wells. A block copolymer is deposited into the confinement wells. The block copolymer is phase separated into an etchable phase and an etch resistant phase. The etch resistant topographical features direct the etch resistant phase to form an etch resistant plug in each of the etch resistant confinement wells.

主权项

1. A method for fabricating an integrated circuit comprising:
forming a substantially periodic array of a plurality of topographical features comprising a plurality of etch resistant topographical features and at least one graphoepitaxy feature that overlie a semiconductor substrate, wherein the plurality of etch resistant topographical features define a plurality of etch resistant confinement wells and the at least one graphoepitaxy feature defines a graphoepitaxy confinement well that has a different size and/or shape than the etch resistant confinement wells for producing an etch-transferrable directed self-assembly (DSA) result; depositing a block copolymer into the etch resistant confinement wells and the graphoepitaxy confinement well; and phase separating the block copolymer into an etchable phase and an etch resistant phase, wherein the etch resistant topographical features direct the etch resistant phase to form an etch resistant plug in each of the etch resistant confinement wells.