发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.
申请公布号 US2016247666(A1) 申请公布日期 2016.08.25
申请号 US201615018981 申请日期 2016.02.09
申请人 Tokyo Electron Limited 发明人 URAKAWA Masafumi;NAGAMI Koichi
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma processing method using a plasma processing apparatus including a process chamber, a mounting table provided in the process chamber, and an electrode provided to face the mounting table, of plasma processing a substrate on the mounting table, the method comprising: applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.
地址 Tokyo JP