| 发明名称 |
STATIC RANDOM-ACCESS MEMORY (SRAM) THRESHOLD VOLTAGE SHIFT SENSOR |
| 摘要 |
An apparatus includes a static random-access memory (SRAM) and circuitry configured to initiate a correct action. The corrective action may be initiated based on a number of SRAM cells that have a particular state responsive to a power-up of the SRAM. |
| 申请公布号 |
WO2016137670(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
WO2016US15916 |
申请日期 |
2016.02.01 |
| 申请人 |
QUALCOMM INCORPORATED |
发明人 |
MOJUMDER, Niladri Narayan;WANG, Zhongze;CHEN, Xiaonan;SONG, Stanley Seungchul;YEAP, Choh Fei |
| 分类号 |
G11C11/417;G11C7/20;G11C29/02;G11C29/24;G11C29/50 |
主分类号 |
G11C11/417 |
| 代理机构 |
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代理人 |
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