NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A non-volatile memory device includes a substrate having a first area and a second area around the first area, memory cells in the first area. Each memory cell includes a semiconductor body, an electrode layer and a stacked body including a charge storage layer between the semiconductor layer and the electrode layer. The device includes an STI provided between the memory cells and an insulating film provided between the stacked body and the electrode layer. The STI has a top surface at the same height level as a top surface of the stacked body. The device further includes a capacitor element in the second area, which includes a first conductive layer, a dielectric film on the first conductive layer and a second conductive layer on the dielectric film. The dielectric film includes at least one layer that contains the same material as a material included in the insulating film.

主权项

1. A non-volatile memory device comprising:
a substrate including a first area and a second area around the first area; first and second memory cells in the first area, the first memory cell including:
a first semiconductor body extending in a first direction;an electrode layer extending over the first semiconductor body in a second direction intersecting the first direction; anda first stacked body provided at an intersection of the first semiconductor body and the electrode layer, the first stacked body including a first insulating film on the first semiconductor body, a first charge storage layer on the first insulating film and a second insulating film between the first charge storage layer and the electrode layer, and the second memory cell sharing the electrode layer with the first memory cell, the second memory cell including:
a second semiconductor body extending in the first direction, the electrode layer extending over the second semiconductor body in the second direction; anda second stacked body provided at an intersection of the second semiconductor body and the electrode layer, the second stacked body including a third insulating film on the second semiconductor body, a second charge storage layer on the third insulating film and a fourth insulating film between the second charge storage layer and the electrode layer; a fifth insulating film provided between the first stacked body and the second stacked body; and a sixth insulating film provided between the electrode layer and each of the second insulating film, the fourth insulating film and the fifth insulating film, the sixth insulating film being one of a single-layer film and a stacked film, a first interface between the second insulating film and the sixth insulating film and a second interface between the fourth insulating film and the sixth insulating film being provided at the substantially same height level as a height level of a third interface between the fifth insulating film and the sixth insulating film; and a capacitor element in the second area, the capacitor element including:
a third semiconductor body;a first conductive layer provided on the third semiconductor body;a dielectric film provided on the first conductive layer, the dielectric film including at least one layer that contains the same material as a material included in the sixth insulating film; anda second conductive layer provided on the dielectric film.