SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device achieving microfabrication with maintaining good characteristics at high yield.

SOLUTION: In a semiconductor device using an oxide semiconductor, contact resistance between the oxide semiconductor and source electrode/drain electrode is reduced with promoting microfabrication. In particular, by processing an oxide semiconductor film to form an island-shaped oxide semiconductor film having tapered lateral faces. A taper angle of the lateral face is not less than 1° and less than 10°. At least a part of the source electrode/drain electrode contacts the lateral face of the oxide semiconductor film. This configuration increases a contact region between the oxide semiconductor film and the source electrode/drain electrode thereby to reduce contact resistance.

COPYRIGHT: (C)2013,JPO&INPIT