| 摘要 |
PROBLEM TO BE SOLVED: To greatly improve light emission efficiency, reliability, and at the same time a manufacturing yield by forming a current rejection layer as a layer with specific composition. SOLUTION: First, an n-type GaAs buffer layer 2, an n-type (AlxGa1-x)yIn1-yP clad layer 3, an ((AlxGa1-x)yIn1-yP active layer 4, a p-type (AlxGa1-x)yIn1-yP clad layer 5, and an n-type Inx Ga1-xP (0<x<1) current rejection layer 6 are successively formed on an n-type GaAs substrate 1. Then, the element center part of the n-type current rejection layer 6 is eliminated in a circular shape by etching. A p-type GaP current diffusion layer 7 is laminated on the current rejection layer 6 being subjected to patterning by etching and the p-type clad layer 5 being exposed from the opening part. After that, a p-side electrode 11 is formed on a p-type GaP current diffusion layer 7, and an n-side electrode 10 is formed on the rear surface of the substrate 1. Then, the region of the element center part of the p-side electrode 11 is eliminated so that the region corresponds to the pattern of the n-type current rejection layer 6, and a window is formed. |
