发明名称 |
DYNAMIC FEED FORWARD TEMPERATURE CONTROL TO ACHIEVE CD ETCHING UNIFORMITY |
摘要 |
A method for compensating CD variations across a semiconductor process wafer surface in a plasma etching process including a semiconductor wafer having a process surface comprising patterned features; carrying out a first plasma etching process wherein the semiconductor wafer is heated to at least two selectively controllable temperature zones; determining a first dimensional variation of etched features with respect to reference dimensions over predetermined areas of the process surface including the two selectively controllable temperature zones; determining operating temperatures for the two selectively controllable temperature zones to achieve a targeted dimensional variation change in the first dimensional variation to achieve a desired second dimensional variation; plasma etching the process surface to the desired operating temperatures; and, determining an actual dimensional variation change for use in at least one subsequent plasma etching process.
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申请公布号 |
US2004182822(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20030393909 |
申请日期 |
2003.03.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN LI-SHIUN;CHANG MING-CHING;LIN HUAN-JUST;LIN LI-TE S.;CHIU YUNG -HUNG;TAO HUN-JAN |
分类号 |
C23F1/00;H01L21/302;H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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地址 |
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