PRECURSOR HAVING CONSTANT RATIO OF METAL TO CHALCOGEN ELEMENT FOR PREPARING CHALCOGENIDE THIN-FILM IN THE CHEMICAL VAPOR DEPOSITION METHOD, AND PREPARING METHOD OF THE SAME

摘要

PURPOSE: A precursor for preparing a chalcogenide thin-film in the chemical vapor deposition method, and a preparing method of the same precursor are provided. The precursor has a constant ratio of metal and chalcogen element and is subjected to chemical vapor deposition at low temperature, so that chalcogenide thin-film composed of metal with ME structure and chalcogen element in a ratio of 1:1 can be prepared. CONSTITUTION: The precursor for preparing a chalcogenide thin-film composed of metal with ME structure and chalcogen element in a ratio of 1:1 in the chemical vapor deposition method has the organic metal compound structure represented by formula (1), wherein M is ln and Ga; E is chalcogen element of S or Se; and R and R1 are independently C1-C6 alkyl. The method for preparing the precursor of formula (1) for preparing a chalcogenide thin-film comprises the steps of: dissolving chalcogenol in solvent; mixing the chalcogenol solution with alkylated metal(MR); stirring the mixture at 0 deg. C under argon condition to react the mixture; and removing solvent and isolating and purifying insoluble polymer.