FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to prevent halo ions from diffusing to a channel region and a source/drain region and guarantee an electrical characteristic of a semiconductor device by previously injecting diffusion blocking ions into a halo region before the halo ions are injected and by positioning the diffusion blocking ions in an interstitial site in a silicon lattice. A gate insulation layer(103) and a gate electrode(104) are formed on a semiconductor substrate(101). Diffusion blocking ions are implanted into the substrate to form a diffusion blocking ion region(105). Impurity ions of the first conductivity type are implanted into the front surface of the substrate to form a halo region in the substrate corresponding to the diffusion blocking ion region. Impurity ions of the second conductivity type are implanted into the substrate to form a low density ion implantation region in the semiconductor at both sides of the gate electrode.