发明名称 |
Method of fabricating a dual gate oxide |
摘要 |
A method of fabricating a dual gate oxide of a semiconductor device includes forming a first gate insulation layer over an entire surface of a substrate, removing a portion of the first gate insulation layer to selectively expose a first region of the substrate using a first mask and performing an ion implantation on the selectively exposed first region of the substrate using the first mask, and forming a second gate insulation layer on the first gate insulation layer and the exposed first region of the substrate to form a resultant gate insulation layer having a first thickness over the first region of the substrate and a second thickness over a remaining region of the substrate, the first thickness and the second thickness being different.
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申请公布号 |
US2005170575(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050034865 |
申请日期 |
2005.01.14 |
申请人 |
LEE HYAE-RYOUNG;BAE SU-GON |
发明人 |
LEE HYAE-RYOUNG;BAE SU-GON |
分类号 |
H01L21/8238;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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