发明名称 SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector and a radiation detecting apparatus capable of preventing degradation of detecting characteristics properly. <P>SOLUTION: A semiconductor radiation detecting apparatus 1 comprises a semi-conductor crystal 11a, using at least one of semiconductor crystal among CdTe, CdZnTe, GaAs and Tl, sandwitched between the electrodes of a cathode C and a cathode A. At least one of the electrode has a laminated structure composed of a plurality of metals, and the first layer is formed with Pt or Au and the second layer is formed with a metal having lower hardness than Pt or Au of the first layer. The second layer composed of In is formed with electroless plating method. And, metal layers are laminated on the second layer furthermore. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008089352(A) 申请公布日期 2008.04.17
申请号 JP20060268570 申请日期 2006.09.29
申请人 HITACHI LTD 发明人 KOMINAMI SHINYA;KIYONO TOMOYUKI
分类号 G01T1/24;G01T1/161;H01L31/09 主分类号 G01T1/24
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