发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of supplying a charge current efficiently to an object element of electric charge. SOLUTION: The semiconductor device which supplies the charge current to an object element C of electric charge has a first conductive type semiconductor layer 1, a first node N1 coupled to the first electrode of the object element C of charge, and a second node N2 coupled to a power source potential node NL1 to which a power source voltage is supplied, has a first semiconductor region 2 of a second conductive type formed on the main surface of the semiconductor layer 1, and a third node N3 coupled to the power source potential node NL1, wherein a second semiconductor region 3 of the first conductive type formed in the surface of the first semiconductor region 2 leaving a space against the semiconductor layer 1, and a charge carrier movement restricting portion which restricts the movement of charge carriers from the third node N3 to the semiconductor layer 1 are equipped. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008227167(A) 申请公布日期 2008.09.25
申请号 JP20070063711 申请日期 2007.03.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 TERAJIMA TOMOHIDE
分类号 H01L21/822;H01L21/337;H01L21/8234;H01L21/8249;H01L27/04;H01L27/06;H01L27/088;H01L27/095;H01L29/808 主分类号 H01L21/822
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