MANUFACTURING METHOD OF CRYSTALLINE SEMICONDUCTOR FILM, AND LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a crystalline semiconductor film high in pressure resistance, and small in dispersion of characteristics among regions; and a laser device suitably used for the manufacturing method. SOLUTION: This method is for manufacturing a crystalline semiconductor film formed by melting and crystallizing an amorphous semiconductor film by alternately repeating irradiation and movement of a laser beam. In the manufacturing method of the crystalline semiconductor film, the laser beam is emitted to a region including a bulge part of the crystalline semiconductor film formed by immediately preceding emission at an intensity leaving a part of the crystalline semiconductor film located under the bulge part. COPYRIGHT: (C)2009,JPO&INPIT