| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition capable of forming a resist pattern with more improved lithography characteristic, and a resist pattern formation method using the resist composition, and also a polymeric compound for use in the resist composition.SOLUTION: The invention is a resist composition which generates acid upon exposure and whose solubility in respect to a developer changes in accordance with the action from acid, and it contains a base material component (A) whose solubility in respect to a developer changes in accordance with the action from acid, and the base material component (A) comprises a polymeric compound (A1) that has a constitutional unit (a0) comprising -NH-SO-containing cyclic group and a constitutional unit (a6) that generates acid upon exposure. Also provided is a resist pattern formation method using the resist composition. |
