发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an art to achieve easy adjustment work of a direction of a gas nozzle of a material, a reaction gas and the like in a vertical direction.SOLUTION: In a substrate processing apparatus, one end side of a reaction gas nozzle 32 which is provided in such a manner as to extend in an anteroposterior direction and in parallel with and opposite to a rotary table 2 provided in a vacuum vessel 11 is inserted in a through hole in a side wall of the vacuum vessel 11, and the reaction gas nozzle 32 is placed on an inner peripheral surface of a ring member 5 at a position closer to a tip side of the reaction gas nozzle 32 than the through hole. An outer shape of an outer peripheral surface of the ring member 5 is set as a polygon obtained by approximation of a spiral curve by a straight line and the ring member 5 is placed on seat parts 52 located on a left position and a right position away from each other in a circumferential direction. Since change of positions to contact the seat parts 52 by turning the ring member 5 changes distances between the left position and the right position which contact the seat parts 52 and a support position of the ring member 5 where the reaction gas nozzle 32 is placed, a height of the reaction gas nozzle 32 can be adjusted.SELECTED DRAWING: Figure 1
申请公布号 JP2016139666(A) 申请公布日期 2016.08.04
申请号 JP20150012654 申请日期 2015.01.26
申请人 TOKYO ELECTRON LTD 发明人 HONMA MANABU
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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