发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a super junction structure.SOLUTION: A semiconductor device having a super junction structure composed of first conductivity type columns and second conductivity type columns comprises: a first region of the super junction structure in which a PN ratio increases with the increasing distance from a first surface side toward a second surface side of the super junction structure; and a second region of the super junction structure which contacts the first region and adjacent to a channel region of the semiconductor device. A PN ratio in the second region is lower than a PN ratio of the first region on and end on the second surface side and a thickness of the second region is thinner than a thickness of the first region.SELECTED DRAWING: Figure 1
申请公布号 JP2016139761(A) 申请公布日期 2016.08.04
申请号 JP20150015457 申请日期 2015.01.29
申请人 FUJI ELECTRIC CO LTD 发明人 SAKATA TOSHIAKI;KITAMURA MUTSUMI
分类号 H01L29/78;H01L29/06 主分类号 H01L29/78
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