发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a transistor with good electric characteristics.SOLUTION: A semiconductor device comprises: a first insulator on a substrate; a second insulator on the first insulator; an oxide semiconductor on the second insulator; a third insulator on the oxide semiconductor; a fourth insulator on the third insulator; and a first conductor on the fourth insulator. The second insulator and the third insulator contain at least one of elements other than oxygen, included in the oxide semiconductor. The first insulator and the second insulator have a region containing fluorine. It is preferable that the fourth insulator has a region containing fluorine, silicon and hafnium.SELECTED DRAWING: Figure 1
申请公布号 JP2016225585(A) 申请公布日期 2016.12.28
申请号 JP20150189851 申请日期 2015.09.28
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;NAKAYAMA TOMONORI;NAKAJIMA MOTOI;HIRAMATSU TOMOKI
分类号 H01L29/786;G09F9/30;H01L21/8238;H01L21/8242;H01L27/092;H01L27/108;H01L27/146 主分类号 H01L29/786
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