PLASMA ETCHING MACHINE

摘要

A plasma etching apparatus is provided to minimize a discharge phenomenon caused by deposition of byproducts and embody a more stable etch characteristic by including a focus ring of a roughness type and by lengthening a path through which the byproducts penetrate into the lower surface of the focus ring. A wafer is placed on an electrostatic chuck(12). The electrostatic chuck is surrounded by insulation accessories. A focus ring(50) of a ring type is disposed over the electrostatic chuck and the insulation accessories(30). The focus ring has a concavo-convex structure in a region where the focus ring comes in contact with the insulation accessories.