METHOD OF FORMING THIN FILM USING SILYLAMINE

摘要

A method for forming thin film using silylamine is provided to form a high quality layer at a good deposition rate by using silylamine as a silicon source in forming a thin film by an ALD(atomic layer deposition). A semiconductor substrate is inserted into a chamber. The first reaction material is injected into the chamber to form a chemical absorption layer of the first reaction material on the semiconductor substrate wherein the first reaction material is selected from a silylamine group(102). Inert gas is supplied to the chamber or the chamber is exhausted to eliminate the first reaction material physically absorbed to the chemical absorption layer of the first reaction material. The second reaction material is injected to the chamber to be chemically absorbed to the first reaction material so that a thin film of an atomic layer unit is formed on the semiconductor substrate(106). Inert gas is supplied to the chamber or the chamber is exhausted to eliminate the unreacted part of the second reaction material(108).