| 摘要 |
PROBLEM TO BE SOLVED: To provide a production process of a silicon wafer in which heat treatment for gettering is not required and contaminants in the silicon wafer can be gettered effectively even when the silicon wafer is made thin by grinding. SOLUTION: The production process of a silicon wafer comprises a contaminant activation step for bringing the charged state of contaminants in the silicon wafer into activated state where the contaminants react easily on an oxygen deposition nucleus by irradiating the contaminants with a laser beam. COPYRIGHT: (C)2007,JPO&INPIT
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