| 摘要 |
PROBLEM TO BE SOLVED: To reduce the separation length between optical elements in an optical semiconductor integrated device wherein the optical elements sharing an embedded mesa stripe including an optical waveguide are monolithically integrated. SOLUTION: This optical semiconductor integrated device comprises a mesa stripe 6 including an upper clad layer 5 laminated on the optical waveguide 4 and having side faces insulated by a high resistance embedded layer 7, and first and second electrodes 12a, 12b provided on the upper surface of the mesa stripe 6 via a separating zone 10. The minimum width of the mesa strip 6 in the separating zone 10 is smaller than the maximum width thereof under the first electrode 12a, and the maximum width thereof under the second electrode 12b. The width of the upper clad layer 5 in the separating zone 10 is small, so that the interference from the adjacent electrode is suppressed. On the other hand, the degradation of the device characteristics is reduced because the width of the optical waveguide 4 can be made larger under the electrode. COPYRIGHT: (C)2007,JPO&INPIT
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