| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an LTGA (La-Ta-Ga-Al oxide) single crystal having a uniform composition and free from cracks. SOLUTION: The method for producing the LTGA single crystal includes a filling process for filling an LTGA seed crystal 5 at the inside of a crucible 3 and filling an LTGA raw material 6 by stacking it on the LTGA seed crystal 5, a melting process for arranging the crucible 3 in the inside of a furnace having a temperature gradient in the vertical direction of the crucible 3 and melting the LTGA raw material 6 to form a melt, and a growing process for growing the LTGA single crystal by progressively solidifying the melt toward an upper part from a lower part. The contents of lanthanum and tantalum contained in a part farthest from the LTGA seed crystal 5 of the LTGA raw material 6 are each higher than each content in a part brought into contact with the LTGA seed crystal 5. COPYRIGHT: (C)2007,JPO&INPIT
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