发明名称 METHOD FOR FABRICATING CAPACITOR WITH CYLINDER STORAGE NODE
摘要 A capacitor manufacturing method including cylinder charge storage electrodes is provided to prevent leaning phenomenon of the charge storage electrodes with omitting a POM process by being deposited as a conformal form by progressing a forming process of an amorphous carbon layer by listing vacuum evaporation, etching and vacuum evaporation. A sacrificing layer is formed at the upper part of a substrate(31) in which a cell region and peripheral circuit area are equipped. A plurality of hole patterns are formed in the cell region by etching the sacrificing layer. Charge storage electrodes(35) of a cylinder type are formed inside the hole pattern respectively. A part of the charge storage electrodes is exposed by removing the sacrificing layer. A conformal amorphous carbon layer having uniform thickness regardless of a lower shape is formed at a whole side including the charge storage electrodes. An amorphous carbon pattern(36F,36G) catching the exposed top of the charge storage electrodes in which the amorphous carbon layer is blanket etched is formed. The sacrificing layer is altogether removed. The amorphous carbon pattern is removed.
申请公布号 KR20090000519(A) 申请公布日期 2009.01.07
申请号 KR20070064644 申请日期 2007.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AN, HYEON JU;KU, JA CHUN;KIM, CHAN BAE;AHN, SANG TAE;CHUNG, CHAE O;LEE, HYO SEOK;MIN, SUNG KYU;KIM, EUN JEONG
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
主权项
地址