NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A non-volatile memory device and a memory system including the same are provided to improve read performance by reducing a time for loading voltage to a word line. CONSTITUTION: A first NAND string (NS11) includes a first string selection transistor (SST), a first local ground selection transistor (LGST), a first global ground selection transistor (GGST), and a first memory cell. A second NAND string includes a second string selection transistor, a second local ground selection transistor, a second global ground selection transistor, and a second memory cell. Pass transistors (PT1-PT5) provide selected operation voltage to the first and the second string selection transistor, the first and the second local ground selection transistor, and the first and the second global selection transistor.