EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE

摘要

Provided is an epitaxial SiC single crystal substrate, which includes a SiC single crystal wafer whose main plane is a c-plane or a plane obtained by inclining the c-plane at an inclination angle of more than 0 degree but not more than 10 degrees, and a SiC epitaxial film formed on the main plane of the SiC single crystal wafer. The dislocation row density of penetrating blade-like dislocation rows formed on the SiC epitaxial film is 10 rows/cm2 or less.