Verspannte Silizium-MOS-Vorrichtung mit BOX-Schicht(Burried Oxide-layer)zwischen den Source- und Drain-Gebieten und Herstellungsverfahren dafür,申请号DE200611003402T-传众专利搜索

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发明名称	Verspannte Silizium-MOS-Vorrichtung mit BOX-Schicht(Burried Oxide-layer)zwischen den Source- und Drain-Gebieten und Herstellungsverfahren dafür
摘要
申请公布号	DE112006003402(B4)	申请公布日期	2010.01.28
申请号	DE200611003402T	申请日期	2006.12.06
申请人	INTEL CORP.	发明人	CURELLO, GIUSEPPE;DESHPANDE, HEMANT V.;TYAGI, SUNIT;BOHR, MARK
分类号	H01L21/336;H01L27/12;H01L29/165;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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