发明名称 SUPPORT GLASS SUBSTRATE AND LAMINATE USING SAME
摘要 The present invention addresses a technical problem of producing a support substrate that is less likely to cause a change in dimension of a processing substrate and a laminate using the support substrate, and thereby contributing to high-density mounting of a semiconductor package. The present invention is characterized in that the average coefficient of linear thermal expansion in a temperature range from 20 to 200°C is more than 110 × 10-7/°C and not more than 160 × 10-7/°C.
申请公布号 WO2016098499(A1) 申请公布日期 2016.06.23
申请号 WO2015JP81983 申请日期 2015.11.13
申请人 NIPPON ELECTRIC GLASS CO., LTD. 发明人 SUZUKI RYOTA;TAKAHASHI TAKAHIRO
分类号 C03C3/083;C03B17/00;C03C3/085;C03C3/087;C03C3/091;C03C3/093;H01L21/02;H01L21/683 主分类号 C03C3/083
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