| 摘要 |
In a system and method of growing a diamond film, a cooling gas flows between a substrate and a substrate holder of a plasma chamber and a process gas flows into the plasma chamber. In the presence of an plasma in the plasma chamber, a temperature distribution across the top surface of the substrate and/or across a growth surface of the growing diamond film is controlled whereupon, during diamond film growth, the temperature distribution is controlled to have a predetermined temperature difference between a highest temperature and a lowest temperature of the temperature distribution. The as-grown diamond film has a total thickness variation (TTV) < 10%, < 5%, or < 1%; and/or a birefringence between 0 and 100 nm/cm, 0 and 80 nm/cm, 0 and 60 nm/cm, 0 and 40 nm/cm, 0 and 20 nm/cm, 0 and 10 nm/cm, or 0 and 5 nm/cm. |
